onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C
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Onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole
Specifications of Onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole | |
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Instock | instock |
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