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Infineon P-Channel MOSFET, 7.2 A, 20 V, 6-Pin DFN2020 IRLHS2242TRPBF

About The 1mm, Maximum Operating Temperature: +150 °C.2 A, 20 V, 6-Pin DFN2020 IRLHS2242TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 53 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1

Infineon P-Channel MOSFET, 7.2 A, 20 V, 6-Pin DFN2020 IRLHS2242TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 53 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 9.6 W, Maximum Gate Source Voltage: -12 V, +12 V, Length: 2.1mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon P-Channel MOSFET, 7.2 A, 20 V, 6-Pin DFN2020 IRLHS2242TRPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon P-Channel MOSFET, 7.2 A, 20 V, 6-Pin DFN2020 IRLHS2242TRPBF

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Infineon P-Channel MOSFET, 7.2 A, 20 V, 6-Pin DFN2020 IRLHS2242TRPBF
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    4V, Maximum Power Dissipation: 9.1V, Minimum Gate Threshold Voltage: 0.2 A, 20 V, 6-Pin DFN2020 IRLHS2242TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 53 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.

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    1mm, Maximum Operating Temperature: +150 °C.6 W, Maximum Gate Source Voltage: -12 V, +12 V, Length: 2.

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