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Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

About The 6mm, Maximum Operating Temperature: +150 °C.Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 48 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 48 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 29 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 6.6mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

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Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3
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    • Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

    Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

    Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 48 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.6mm, Maximum Operating Temperature: +150 °C.

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    • Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

    Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

    Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 48 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.

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