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Infineon N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220AB IRFZ44VPBF

About The Infineon N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220AB IRFZ44VPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 115 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Maximum Operating Temperature: +175 °C

Infineon N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220AB IRFZ44VPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 115 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220AB IRFZ44VPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220AB IRFZ44VPBF

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Infineon N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220AB IRFZ44VPBF
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