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Onsemi FGHL50T65SQDT IGBT, 100 A 650 V, 3-Pin TO-247

About The 0V, Maximum Power Dissipation: 134 W, Transistor Configuration: Single.onsemi FGHL50T65SQDT IGBT, 100 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±30

onsemi FGHL50T65SQDT IGBT, 100 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±30.0V, Maximum Power Dissipation: 134 W, Transistor Configuration: Single

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Onsemi FGHL50T65SQDT IGBT, 100 A 650 V, 3-Pin TO-247

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Onsemi FGHL50T65SQDT IGBT, 100 A 650 V, 3-Pin TO-247

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Onsemi FGHL50T65SQDT IGBT, 100 A 650 V, 3-Pin TO-247
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