Infineon N-Channel MOSFET, 77 A, 650 V, 3-Pin TO-247 IPW60R041C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 481 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 16.13mm, Maximum Operating Temperature: +150 °C
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Infineon N-Channel MOSFET, 77 A, 650 V, 3-Pin TO-247 IPW60R041C6FKSA1
Specifications of Infineon N-Channel MOSFET, 77 A, 650 V, 3-Pin TO-247 IPW60R041C6FKSA1 | |
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