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Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

About The 3mJ, Gate Capacitance: 1430pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C.13 x 5

Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 326 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 4.3mJ, Gate Capacitance: 1430pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > IGBTs

Specifications of Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

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Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
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