Infineon N-Channel MOSFET, 6.8 A, 650 V, 3 + Tab-Pin SOT-223 IPN60R1K0CEATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 5 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 1.7mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 6.8 A, 650 V, 3 + Tab-Pin SOT-223 IPN60R1K0CEATMA1
Specifications of Infineon N-Channel MOSFET, 6.8 A, 650 V, 3 + Tab-Pin SOT-223 IPN60R1K0CEATMA1 | |
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