Infineon N-Channel MOSFET, 6.6 A, 550 V, 3-Pin SOT-223 IPN50R950CEATMA1
6 A, 550 V, 3-Pin SOT-223 IPN50R950CEATMA1, Mounting Type: Surface Mount, Pin Count: 3 + Tab, Maximum Drain Source Resistance: 950 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 5 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.5V, Minimum Gate Threshold Voltage: 2.83V, Height: 1.