reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Electronic Components & Power & Connectors
Semiconductors
Discrete Semiconductors
MOSFETs
Infineon

Infineon N-Channel MOSFET, 6.6 A, 550 V, 3-Pin SOT-223 IPN50R950CEATMA1

About The 83V, Height: 1.5V, Minimum Gate Threshold Voltage: 2

Infineon N-Channel MOSFET, 6.6 A, 550 V, 3-Pin SOT-223 IPN50R950CEATMA1, Mounting Type: Surface Mount, Pin Count: 3 + Tab, Maximum Drain Source Resistance: 950 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 5 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.83V, Height: 1.7mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 6.6 A, 550 V, 3-Pin SOT-223 IPN50R950CEATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 6.6 A, 550 V, 3-Pin SOT-223 IPN50R950CEATMA1

Category
Instockinstock

Last Updated

Infineon N-Channel MOSFET, 6.6 A, 550 V, 3-Pin SOT-223 IPN50R950CEATMA1
More Varieties

Rating :- 9.78 /10
Votes :- 9