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International Rectifier P-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7424TRPBF

About The .5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2

International Rectifier P-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7424TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Length: 5mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

International Rectifier P-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7424TRPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of International Rectifier P-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7424TRPBF

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International Rectifier P-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7424TRPBF
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