IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 180 W, Switching Speed: 20kHz, Transistor Configuration: Single, Length: 10.66mm, Width: 4.83mm, Height: 16mm, Dimensions: 10.66 x 4.83 x 16mm, Maximum Operating Temperature: +150 °C
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IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole
Specifications of IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole | |
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