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Vishay N-Channel MOSFET, 6.1 A, 1000 V, 3-Pin TO-247AC IRFPG50PBF

About The 1 A, 1000 V, 3-Pin TO-247AC IRFPG50PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 190 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 15.87mm, Maximum Operating Temperature: +150 °C

Vishay N-Channel MOSFET, 6.1 A, 1000 V, 3-Pin TO-247AC IRFPG50PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 190 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 15.87mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay N-Channel MOSFET, 6.1 A, 1000 V, 3-Pin TO-247AC IRFPG50PBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 6.1 A, 1000 V, 3-Pin TO-247AC IRFPG50PBF

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Vishay N-Channel MOSFET, 6.1 A, 1000 V, 3-Pin TO-247AC IRFPG50PBF
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