Vishay Siliconix Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 SQS966ENW-T1_GE3
About The 8 W, Maximum Gate Source Voltage: ±20 V, Length: 3.Vishay Siliconix Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 SQS966ENW-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2
Vishay Siliconix Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 SQS966ENW-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 27.8 W, Maximum Gate Source Voltage: ±20 V, Length: 3.15mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay Siliconix Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 SQS966ENW-T1_GE3
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Vishay Siliconix Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 SQS966ENW-T1_GE3 | |
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