Vishay Siliconix TrenchFET SQJ481EP-T1_GE3 P-Kanal, SMD MOSFET 80 V / 16 A 45 W, 4-Pin PowerPAK SO-8L
5V, Transistor-Konfiguration: Einfach, Gate-Source Spannung max.: ±20 V, Automobilstandard: AEC-Q101.: 90 mΩ, Channel-Modus: Enhancement, Gate-Schwellenspannung max.Vishay Siliconix TrenchFET SQJ481EP-T1_GE3 P-Kanal, SMD MOSFET 80 V / 16 A 45 W, 4-Pin PowerPAK SO-8L, Drain-Source-Widerstand max.