Infineon Silicon N-Channel MOSFET, 63 A, 60 V, 8-Pin TSDSON-8 FL BSZ068N06NSATMA1

65 x 3.

Igus Guide Block WW-06-30-08, Carriage Length: 80mm, Carriage Width: 54mm, Static Load Rating: 1680N.

4mm Groove Diameter, Ring Thickness: 1mm, Ring Outside Diameter: 21.4mm.RS PRO Steel External Circlip, 14mm Shaft Diameter, 13.

Siemens Connector for Use with Power Module, Accessory Type: Connection Module, Range: SIMATIC DP, MPN: 6ES7194-4BA00-0AA0.

2mm, Depth: 2.2 x 2.EPCOS, B82422A*100, 1210 (3225M) Wire-wound SMD Inductor with a Ceramic Core, 150 nH ±10% Wire-Wound 390mA Idc Q:25, Length: 3.5mm, Dimensions: 3.

8mm, Mounting Type: Surface Mount, Load Capacitance: 12pF, Length: 3.2 x 2.

Infineon Silicon N-Channel MOSFET, 63 A, 60 V, 8-Pin TSDSON-8 FL BSZ068N06NSATMA1.

5W, Wetted Materials: FFKM, PEEK, Input Connection Size: 2.6mm, MPN: 156993.Burkert Diaphragm Electric Operated Positive Displacement Pump, 5ml/min, 200 mbar, 24 V dc, IP Rating: IP40, Series: 7604, Maximum Fluid Temperature: +60°C, Body Material: PEEK, Input Power: 1.

Infineon Silicon N-Channel MOSFET, 63 A, 60 V, 8-Pin TSDSON-8 FL BSZ068N06NSATMA1.

5W, Wetted Materials: FFKM, PEEK, Input Connection Size: 2.Burkert Diaphragm Electric Operated Positive Displacement Pump, 5ml/min, 200 mbar, 24 V dc, IP Rating: IP40, Series: 7604, Maximum Fluid Temperature: +60°C, Body Material: PEEK, Input Power: 1.