onsemi N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS7D3N04CLTWGOS
2V, Maximum Power Dissipation: 38 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 5mm, Maximum Operating Temperature: +175 °C.onsemi N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS7D3N04CLTWGOS, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.