Infineon N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK IPD30N10S3L34ATMA1
Infineon N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK IPD30N10S3L34ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 42 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.3mm.