Toshiba N-Channel MOSFET, 17 A, 800 V, 3-Pin TO-220SIS TK17A80W,S4X(S
Toshiba N-Channel MOSFET, 17 A, 800 V, 3-Pin TO-220SIS TK17A80W,S4X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 290 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 45 W, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10mm, Maximum Operating Temperature: +150 °C.