IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P
IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 16.26mm, Maximum Operating Temperature: +175 °C.