IXYS N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXFN80N50P
6mm, Length: 38.IXYS N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXFN80N50P, Package Type: SOT-227B, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 65 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 9.2mm.