onsemi N-Channel MOSFET, 9 A, 200 V, 3-Pin DPAK FQD12N20LTM
onsemi N-Channel MOSFET, 9 A, 200 V, 3-Pin DPAK FQD12N20LTM, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 280 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.6mm, Maximum Operating Temperature: +150 °C.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.