Vishay N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 SIHH26N60E-T1-GE3
Vishay N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 SIHH26N60E-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 135 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 202 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 8.1mm, Maximum Operating Temperature: +150 °C.