onsemi Dual P-Channel MOSFET, 2.9 A, 30 V, 8-Pin SOIC FDS9953A
onsemi Dual P-Channel MOSFET, 2.9 A, 30 V, 8-Pin SOIC FDS9953A, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 130 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -25 V, +25 V, Length: 5mm, Maximum Operating Temperature: +150 °C.