IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3
25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 16.IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.13mm, Maximum Operating Temperature: +150 °C.5V, Maximum Power Dissipation: 1.