onsemi Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 NTJD1155LT1G
2mm, Maximum Operating Temperature: +150 °C.3 A, 8 V, 6-Pin SOT-363 NTJD1155LT1G, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 400 mW, Transistor Configuration: N+P Loadswitch, Maximum Gate Source Voltage: +8 V, Length: 2.onsemi Dual N/P-Channel-Channel MOSFET, 1.