onsemi P-Channel MOSFET, 1.25 A, 60 V, 3-Pin SOT-23 FDN5618P
25 A, 60 V, 3-Pin SOT-23 FDN5618P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 170 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.onsemi P-Channel MOSFET, 1.92mm.94mm, Length: 2.