IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-220AB IXFP22N60P3
66mm.IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-220AB IXFP22N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 16mm, Length: 10.