Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU
2 A, 20 V, 6-Pin UF6 SSM6K403TU, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 66 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.Toshiba N-Channel MOSFET, 4.35V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±10 V, Length: 1.7mm, Maximum Operating Temperature: +150 °C.