onsemi N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB FDP3632
4mm.onsemi N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB FDP3632, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 310 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.