Infineon N-Channel MOSFET, 29 A, 60 V, 3-Pin DPAK IPD350N06LGBTMA1
Infineon N-Channel MOSFET, 29 A, 60 V, 3-Pin DPAK IPD350N06LGBTMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 47 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.