Infineon N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRF640NSTRLPBF
Infineon N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRF640NSTRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 150 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.67mm, Maximum Operating Temperature: +175 °C.