Toshiba N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK TK8P60W5,RVQ(S
6mm, Maximum Operating Temperature: +150 °C.Toshiba N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK TK8P60W5,RVQ(S, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 560 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 80 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 6.