onsemi N-Channel MOSFET, 3.9 A, 800 V, 3-Pin TO-220AB FQP4N80
6 Ω, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 10.1mm, Maximum Operating Temperature: +150 °C.onsemi N-Channel MOSFET, 3.9 A, 800 V, 3-Pin TO-220AB FQP4N80, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.