onsemi N-Channel MOSFET, 6.1 A, 30 V, 6-Pin SOT-23 FDC855N
6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 3mm.1 A, 30 V, 6-Pin SOT-23 FDC855N, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 39 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.onsemi N-Channel MOSFET, 6.