Infineon N-Channel MOSFET, 179 A, 30 V, 3-Pin DPAK IRFR8314TRPBF
2V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.Infineon N-Channel MOSFET, 179 A, 30 V, 3-Pin DPAK IRFR8314TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.