Infineon Dual P-Channel MOSFET, 3.4 A, 55 V, 8-Pin SOIC IRF7342TRPBF
4 A, 55 V, 8-Pin SOIC IRF7342TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 170 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C.Infineon Dual P-Channel MOSFET, 3.