Toshiba N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK TK7P60W,RVQ(S
7V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 6.Toshiba N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK TK7P60W,RVQ(S, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.6mm, Maximum Operating Temperature: +150 °C.