onsemi N-Channel MOSFET, 17 A, 100 V, 8-Pin PQFN8 FDMS8622
onsemi N-Channel MOSFET, 17 A, 100 V, 8-Pin PQFN8 FDMS8622, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 97 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C.