Infineon N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB IRFB4227PBF
Infineon N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB IRFB4227PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 330 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 10.