Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3
Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C.