Infineon N-Channel MOSFET, 63 A, 100 V, 3-Pin DPAK IRFR4510TRPBF
9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 143 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.Infineon N-Channel MOSFET, 63 A, 100 V, 3-Pin DPAK IRFR4510TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13.3V.