Vishay N-Channel MOSFET, 17.4 A, 800 V, 3-Pin TO-247AC SIHG21N80AE-GE3
4 A, 800 V, 3-Pin TO-247AC SIHG21N80AE-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 235 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 32 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Length: 15.87mm, Maximum Operating Temperature: +150 °C.Vishay N-Channel MOSFET, 17.