onsemi N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 FDV303N
65V, Maximum Power Dissipation: 350 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: +8 V, Length: 2.92mm, Maximum Operating Temperature: +150 °C.onsemi N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 FDV303N, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 450 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.