Infineon N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK IPD053N08N3GATMA1
5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.Infineon N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK IPD053N08N3GATMA1, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Length: 6.73mm, Maximum Operating Temperature: +175 °C.