Infineon N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD25CN10NGATMA1
Infineon N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD25CN10NGATMA1, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 26 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 71 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Length: 6.73mm, Maximum Operating Temperature: +175 °C.