Infineon N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK IPD031N06L3GATMA1
2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 167 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.Infineon N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK IPD031N06L3GATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.