Vishay N-Channel MOSFET, 32 A, 40 V, 4-Pin PowerPAK SO-8L SQJ412EP-T1_GE3
5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 83 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +175 °C.Vishay N-Channel MOSFET, 32 A, 40 V, 4-Pin PowerPAK SO-8L SQJ412EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.