Toshiba N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220SIS TK32A12N1,S4X(S
8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10mm, Maximum Operating Temperature: +150 °C.Toshiba N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220SIS TK32A12N1,S4X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 13.