Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRLD110PBF
Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRLD110PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Length: 5mm, Maximum Operating Temperature: +175 °C.